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Micron introduced its UFS 4.0 mobile storage solution. The company has already made its new technology available to global smartphone manufacturers and chip vendors.
UFS 4.0 micron technology will be used to produce storage memories in 256GB, 512GB and 1TB capacities. The mass production of storage memories based on this standard will begin in the second half of this year. Thus, it will take a model for the first smartphones equipped with UFS 4.0 micron memories to be launched on the market.
Storage memories based on UFS 4.0 micron technology are built on TCL’s 232-layer flash. According to Micron’s announcement, the 6-page NAND architecture provides the ability to read information at a higher speed. The speed of writing and reading information on UFS 4.0 based storage memories of this company has increased by 100% and 75%, respectively, compared to the previous generation.
written by GSMArenaThe speed of reading data in storage memories based on UFS 4.0 microns reaches 4300 MB/s and the writing speed reaches 4000 MB/s, which is higher than Samsung’s UFS 4.0 standard.
Micron’s UFS 4.0 technology is still 25% more efficient than the previous generation and reduces data write latency by 10%.
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