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Ultra RAM is likely to combine storage and memory space

Scientists from the Department of Physics and Engineering at Lancaster University in the UK have recently published a report on their progress on UltraRam; An innovative idea that will provide RAM and storage memory in one piece of hardware. According to a team of scientists, we are now closer to the ability to produce ultra-RAM than it seems.

According to an article published in Ultra RAM, the technology will combine the stability and storage capacity of data with high speed and RAM performance, according to Digital Trends. Of course, such hardware has not been produced yet, but it is possible to build it. In fact, for this reason, attempts have already been made to make this piece.

Modern RAMs and high-speed SSDs both use flash memory, but the method of using flash memory is different in these two components. Computer memory stores only information that is currently in use, as well as non-permanent data. If you turn off your computer, all this data will disappear. On the other hand, data storage devices such as SSDs store your data permanently, which makes this type of memory “non-volatile”.

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While memory and storage solutions are similar, there have been no successful attempts to combine the two memories. One such example is Intel optane, which is an alternative to flash memory. However, Intel seems to have abandoned the project, as the company stopped production of all Optane products in 2021.

The idea of ​​an ultra-room may seem like a nonsense based on previous efforts, but it could be made possible, according to five Lancaster University physicists who are researching it. Ultra RAM will actually define a new generation of memory and storage space that is non-volatile and can store data for long periods of time; In addition, it is fast enough to be replaced by RAM.

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The scientists described this process in their paper and showed that the production of silicon wafers could be within the probable range. This process involves the use of quantum wells of indium arsenide (InAs) and aluminum antimonide barriers (AlSb). Quantum wells are very thin layers in which particles can not move up or down, but can move along and across two other planes. Together, these wells and quantum barriers form a triple resonant tunneling structure (TBRT). Scientists believe that ultra-RAM using this technology can be produced cheaper and faster for a variety of computing devices than current solutions.

If ultra-RAM were to become mainstream, it could mean that instead of buying separate storage and RAM separately, we could simply buy a piece with a certain amount of storage space that would meet both needs on any PC.

While this may seem like a good idea on paper, the pricing of this type of technology is likely to be a major hurdle for many. If ultra-RAM is not as expensive as current storage and RAM solutions, only a handful of people will be eager to buy it. There is a lot of work to be done until ultra-rom becomes more than just a subject of study, and research is ongoing.


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